Graphene Works

508 Claire Dr NE
Atlanta, GA 30307
(678) 439 9351


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About Us

Graphene Works, Inc. produces epitaxial graphene grown on SiC. The company is committed to providing the research and industrial sectors with state-of-the-art graphene materials and developing specialized processes for commercializing graphene for materials research and electronics applications.

The company was founded by Walt de Heer (CEO) and Edward Conrad, who pioneered epitaxial graphene fabrication as a material for post-Silicon CMOS technology. Graphene Works has brought together leading graphene researchers whose aim is to enable epitaxial graphene as the next revolution in the electronics industry, and it is the only company with a worldwide license to fabricate and sell graphene material or graphene devices.


The WHAT and WHY of EPITAXIAL GRAPHENE

Epitaxial graphene is the only form of graphene suitable for large-scale carbon electronics. It is grown directly on insulating or conducting 4H- or 6H-SiC wafers. Unlike exfoliated graphene, which is peeled from bulk crystals, epitaxial graphene is flat, extremely well-ordered, inexpensive, and ready for lithographic patterning.  No hunting for micron-sized flakes is necessary and no complicated transfer techniques (which produce defects) are required to begin device fabrication. Epitaxial graphene is grown uniformly across millimeter-dimension samples. It can be grown on either of the two polar faces of SiC: the (0001) Si-face and (000-1) C-face.

Because of its flexibility and reliability of fabrication, it is the perfect platform for post-Si-CMOS materials and device research. The figure below shows a 10,000 FET array grown and patterned from epitaxial graphene grown on SiC.

High-speed RF FETs have now been demonstrated using epitaxial graphene grown on semi-insulating 6H-SiC Si-face material. Extrinsic current-gain cutoff frequencies of 4.4 GHz have been measured that are comparable to Si NMOS devices.  More importantly, the current drive level in this graphene FET is the highest ever observed in any semiconductor FET.†

† Moon, et. al. IEEE Electron Device Letters 30, (2009), p 650.



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